• Critical thickness of MBE-grown Ga1-xInxSb (x < 0.2) on GaSb 

      Nilsen, Tron Arne; Breivik, Magnus; Selvig, Espen; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2009)
      Several Ga1−xInxSb layers, capped with 1 μm of GaSb, were grown on GaSb(0 0 1) substrates by molecular beam epitaxy in a Varian Gen II Modular system using either the conventional sample growth position with substrate ...
    • Fabrication of silicon nitride nano-hole masks for MBE growth of GaN nanowires 

      Uthayakumar, Vathshan (Master thesis, 2022)
      Etterspørselen etter optoelektroniske enheter som fungerer i det ultrafiolette (UV)-spekteret øker i den moderne verden. Det er mange viktige bruksområder for UV-lys, men de fleste UV-lyskilder som er tilgjengelige i dag ...
    • Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes 

      Liudi Mulyo, Andreas; Mukherjee, Anjan; Høiaas, Ida Marie; Ahtapodov, Lyubomir; Nilsen, Tron Arne; Toftevaag, Håvard Hem; Vullum, Per Erik; Kishino, Katsumi; Weman, Helge; Fimland, Bjørn-Ove (Journal article; Peer reviewed, 2021)
      Flip-chip ultraviolet light-emitting diodes based on self-assembled GaN/AlGaN nanocolumns have been fabricated, exploiting single-layer graphene not only as a growth substrate but also as a transparent conducting electrode. ...